Intern - Advanced DRAM Cell & Device Technology
Core
Develop and characterize next-generation DRAM cell and access device technologies through experimental studies, data analysis, and collaboration with multidisciplinary engineering teams.
Role type
Intern, semiconductor device engineer (DRAM)
Builds
Future memory technology solutions (DRAM cells, access devices, materials systems)
Domain
Semiconductor industry, memory technology, device physics
Required skills
Semiconductor device physics, materials science, electrical characterization, statistical analysis, Python/MATLAB/JMP scripting, DRAM operational concepts
Preferred skills
DRAM/NAND device development experience, thin film engineering, TCAD simulation, reliability mechanisms analysis, AI/LLM tools for engineering workflows
Technologies
Python, MATLAB, JMP, TCAD, AI-assisted engineering tools
Responsibilities
Evaluate DRAM access devices and cell stack elements via characterization and data analysis; Design and implement silicon experiments; Analyze device- and array-level behavior (sensing margins, retention, leakage); Collaborate with modeling, design, and manufacturing teams; Apply AI tools to enhance data analysis and decision-making
Seniority
Intern, academic researcher