CareerPlan

Senior Power FET Development Engineer

Hopewell Junction, NY, United StatesFull-time$147k2026-10-07 → 2026-11-10
Based in United States

Core

Lead the development of next-generation discrete power MOSFET and FET technologies from concept through qualification and production ramp.

Role type

Senior IC power device development engineer

Builds

Discrete power MOSFETs, Super Junction, SiC, and GaN devices

Domain

Semiconductor manufacturing / Power electronics

Required skills

Semiconductor device physics, Device reliability, Semiconductor manufacturing processes, Wafer fabrication, Electrical characterization, Statistical analysis, DOE, SPC, FMEA, Six Sigma, Cross-functional collaboration, Technical leadership

Preferred skills

High-voltage and high-current power device development, 300mm semiconductor manufacturing, TCAD/SPICE/electro-thermal modeling, Wafer-level test/WAT/PCM/probe testing, Packaging technologies (DFN, TO, Copper clip, Power modules), AEC-Q101 qualification, SiC and GaN technologies, JMP/Python/MATLAB, Patent development