Promotion - Physikalisches Verständnis von Designelementen in SiC Power MOSFETs
Core
Develop and simulate precise Wide-Bandgap power devices and test structures, fabricate them in a cleanroom, and characterize their electrical and physical properties to optimize simulation models.
Role type
PhD Researcher (Silicon Carbide Power MOSFETs)
Builds
Next-generation energy-efficient power electronic systems using Wide-Bandgap materials
Domain
Power electronics / Semiconductor physics / Wide-Bandgap materials
Required skills
Solid-state and power semiconductor physics, Semiconductor modeling, TCAD simulation, Cleanroom fabrication, Electrical characterization, Model calibration
Preferred skills
Wide-Bandgap or III-V semiconductor expertise, Master's degree with excellent grades
Technologies
TCAD, Cleanroom equipment
Responsibilities
Develop and simulate Wide-Bandgap power devices and test structures, Fabricate devices in Bosch cleanroom, Characterize electrical and physical properties, Optimize and calibrate simulation models based on characterization results
Seniority
PhD Candidate / Researcher
