RF Technology Development Epitaxy and Integration Engineer – Principal Engineer
Core
Develop, evaluate, and qualify CVD Si/SiGe epitaxial processes and FEOL semiconductor devices to meet performance, cost, and yield requirements for RF technologies.
Role type
Principal Epitaxy and Integration Engineer
Builds
RF semiconductor devices and processes
Domain
Semiconductor manufacturing (Foundry)
Required skills
Epitaxial growth techniques (CVD Si/SiGe), FEOL process development, DOE methodologies, statistical analysis, yield learning, device physics, RF fundamentals
Preferred skills
SiGe BiCMOS FEOL/BEOL processing, III-V processing, semiconductor process development, leadership experience, project management
Technologies
CVD, Si, SiGe, III-V, FEOL, BEOL, S-parameters
Responsibilities
Define epitaxial growth conditions and controls, optimize and qualify FEOL devices, drive integration optimization using DOE, partner with failure analysis teams, establish new technology design rules and test methodologies, solve technical process problems
Seniority
Principal, hands-on IC