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RF Technology Development Engineer – Principal Engineer

Essex Junction💼 Full-time💰 $85,000–$85,000🗓 2026-04-24 → 2026-07-30

Core

Developing semiconductor technologies for RF devices including design, electrical characterization, and process optimization.

Role type

Principal RF Technology Development Engineer (Device & Integration)

Builds

FEOL and BEOL semiconductor devices and processes for RF applications

Domain

Semiconductor manufacturing / RF technology

Deliverable

production ML models | product features | dashboards & analysis | research | client delivery | infrastructure | physical/clinical work

Required skills

CMOS device physics, semiconductor processing, DC and RF characterization (s-parameter, noise figure, loadpull), DOE design and analysis, theoretical studies and simulations

Preferred skills

Silicon or SiGe BiCMOS FEOL/BEOL processing, RF device design and high-frequency measurement, Cadence layout and simulation tools, project management

Technologies

Cadence, s-parameter analyzers, loadpull systems

Responsibilities

Design and characterize RF devices (FET, bipolar, diodes, passives); optimize device performance via simulation and benchmarking; execute DOE and analyze results; establish new technology design rules and test methodologies; solve technical process problems; partner with unit process and failure analysis teams

Seniority

Principal, hands-on IC with strategic process ownership

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