Lead Principal Engineer Device Development RF-GaN (w/m/div)
Core
Development of leading-edge RF-GaN/Si device technologies for RF power applications from process concept to production handover.
Role type
Lead Principal Engineer Device Development RF-GaN
Builds
Next-generation RF-GaN/Si technology platforms for high-performance RF power applications
Domain
Semiconductor manufacturing / RF power electronics
Required skills
GaN device technology development, semiconductor physics, device characterization, process optimization, reliability engineering, project coordination, cross-functional collaboration
Preferred skills
Master's or PhD in Microelectronics, Electrical Engineering, or Physics
Technologies
RF-GaN, RF-GaN/Si, semiconductor fabrication
Responsibilities
Develop RF-GaN/Si device technologies from concept to production, implement novel process and device concepts, optimize device performance and reliability, coordinate with project management and product design, collaborate in an international multi-site environment
Seniority
Principal, hands-on IC with strategic oversight