Development Engineer and Project Lead PowerGaN Metallization (f/m/div)
Core
Develop 300 mm front-end Cu metallization and pad technologies for GaN-based power semiconductor applications, driving advanced metallization solutions from initial process concept through to successful implementation in manufacturing.
Role type
Senior IC development engineer and project lead (semiconductor process technology)
Builds
GaN-based power semiconductor devices
Domain
Semiconductor manufacturing / Power electronics
Required skills
Process technology development, Process integration, Metallization expertise, Technical leadership, Project management, Manufacturing optimization
Preferred skills
Cross-site team collaboration, Multinational environment experience
Technologies
300 mm wafer, Cu metallization, BEOL technology, GaN
Responsibilities
Develop 300 mm front-end Cu metallization and pad technologies for GaN-based power semiconductor applications, Take on project leadership responsibilities for BEOL technology development activities in Dresden, Drive the development and implementation of metallization concepts with a focus on stability, yield, reliability, and manufacturing costs, Collaborate closely with process development engineers to define, implement, and optimize process requirements
Seniority
Senior, hands-on IC with project leadership