Principal Engineer - GaN Epitaxy Development
Core
Design GaN epitaxial structures and optimize MOCVD processes to transition R&D processes into high-yield manufacturing for power HEMTs, RF, and photonics devices.
Role type
Principal Engineer - GaN Epitaxy Development
Builds
GaN-on-Silicon and GaN-on-Sapphire epitaxial layers for power electronics and RF applications
Domain
Semiconductor manufacturing / Materials Science / III-V hetero-epitaxy
Required skills
GaN epitaxial structure design, MOCVD recipe optimization, DOE and SPC, SEM/TEM/AFM/XRD characterization, yield optimization, cross-functional technical leadership
Preferred skills
Ph.D. in physical science or microelectronics, experience with Aixtron/Veeco platforms, scaling from lab to HVM
Technologies
MOCVD, JMP, XRD, AFM, TEM, PL, Ellipsometry, SIMS
Responsibilities
Design GaN epitaxial structures based on device performance targets, optimize MOCVD recipes, transition processes to high-volume manufacturing, analyze characterization data to correlate material properties to device performance, mentor junior engineers, advise on material and equipment investments
Seniority
Principal, hands-on IC with strategic influence