CareerPlan

STAGE - Développement de couches Si:B par épitaxie pour les technologies imageurs F/H

Crolles, FranceFull-time2026-10-21 → 2026-11-10

Core

Develop selective Si:B epitaxial layers for advanced imaging technologies, focusing on conformity and selectivity to prepare trench filling.

Role type

Junior IC materials engineer (epitaxy)

Builds

Si:B epitaxial layers for imaging sensors

Domain

Semiconductor manufacturing / Imaging technology

Required skills

Si:B epitaxy, ellipsometry, resistivity measurement, AFM, SEM microscopy

Preferred skills

SEM microscopy experience

Technologies

Ellipsometry, AFM, SEM

Responsibilities

Develop selective Si:B epitaxial layers, study conformity and selectivity of epitaxy, conduct studies on full wafers and patterned substrates

Seniority

Junior, Master 2 or final year engineering student