CIFRE - Développement de DHBT GaInP/GaAsSb et InP/GaAsSb DHBTs sur GaAs (F/H)
Core
Research and development of pseudomorphic and metamorphic Double Heterojunction Bipolar Transistors (DHBTs) on GaAs substrates to enable high-frequency applications (6G FR3) and high-speed optical communications.
Role type
PhD Researcher (CIFRE) in Semiconductor Physics and Device Fabrication
Builds
High-performance DHBT devices for RF and optical communication applications
Domain
Semiconductor physics, RF electronics, and materials science
Required skills
Semiconductor material physics, device fabrication processes, epitaxy, heterojunction bipolar transistors, RF performance analysis, thermal conductivity evaluation
Preferred skills
Knowledge of GaAsSb/InP DHBT technology, experience with metamorphic structures, problem-solving in scientific research
Technologies
GaAs, InP, GaInP, GaAsSb, epitaxy, RF characterization
Responsibilities
Map GaAsSb composition parameter space for pseudomorphic growth, identify feasible layer stacks for epitaxy, fabricate high-performance DHBTs, transfer DHBT processes to metamorphic platforms, evaluate residual dislocation effects on device yield, assess metamorphic buffer impact on RF performance
Seniority
Junior/Mid-level Researcher (PhD candidate)