Principal Process Engineer - DRAM and Memory Applications
Core
Research, develop, and optimize advanced thin-film processes (ALD, Epitaxy, PECVD) for next-generation DRAM and memory technologies.
Role type
Principal Process Engineer (Memory/DRAM)
Builds
Advanced memory structures including capacitors, word lines, bit lines, and storage nodes.
Domain
Semiconductor manufacturing / Memory technology
Required skills
Atomic Layer Deposition (ALD), Epitaxy, PECVD, Materials characterization (XPS, SIMS, TEM, SEM), DOE/RSM, High-k dielectrics, Metal electrodes, Barrier layers, Memory device architecture, Root cause analysis
Preferred skills
High-volume manufacturing support, Computational Fluid Dynamics (CFD), DRAM capacitor development, Buried word line integration, Emerging memory technologies (MRAM, ReRAM, PCM)
Technologies
ALD, PEALD, Epitaxy, PECVD, XPS, SIMS, RBS, AFM, XRR, XRD, TEM, SEM, ellipsometry, CFD
Responsibilities
Develop and optimize deposition processes for DRAM and emerging memory applications; Drive process innovation for memory-critical films; Support technology development focused on DRAM scaling challenges; Remain at the forefront of memory technology trends and roadmaps; Serve as a technical consultant and subject matter expert for internal teams and leading memory manufacturers; Lead technical problem-solving efforts using scientific methodologies; Design and execute experiments utilizing DOE and RSM; Analyze electrical, physical, and materials characterization data; Troubleshoot equipment and process issues; Collaborate with customers to define requirements and develop process solutions; Publish technical papers and contribute to patent portfolio; Mentor engineers and provide technical leadership
Seniority
Principal, hands-on IC with mentorship