Principal R&D Laser EPI Design Engineer
Core
Design epitaxial growth recipes for III/V semiconductor laser devices to meet performance requirements including output power, wavelength, and reliability.
Role type
Principal R&D Laser EPI Design Engineer
Builds
Novel laser diode devices and related intellectual property (IP)
Domain
Optoelectronics / Semiconductor Physics / Laser Diodes
Required skills
MBE or MOCVD growth of III/V semiconductors, semiconductor wafer analysis (PL, XRD, SIMS, TEM), device physics, data analysis (Python, Matlab, JMP)
Preferred skills
GaAs based VCSEL device experience, device modeling and simulation
Technologies
MBE, MOCVD, Python, Matlab, JMP, SIMS, TEM, EDX, XRD
Responsibilities
Coordinate epitaxial growth recipes with device designers, translate designs into growth recipes, manage external vendors for growth execution, analyze characterization data to modify designs, support NPI with wafer processing and reliability data, generate key IP for novel ideas
Seniority
Principal, hands-on IC