Wissenschaftliche Mitarbeiterin/ Wissenschaftlicher Mitarbeiter (m/w/d) 185/2026
Core
Develop and research a novel p-type doping concept for Si-nanowire transistors using modulation doping of the dielectric shell to overcome scaling issues in ultra-small nanowires.
Role type
Research scientist (solid-state physics / semiconductor device engineering)
Builds
Junctionless nanowire transistors (JNTs) and modulated-doped SiO2 layers
Domain
Semiconductor physics, nanotechnology, materials science
Required skills
Solid-state physics, semiconductor device fabrication, dielectric deposition, electrical characterization, electron-beam lithography, atomic layer deposition (ALD), rapid thermal processing (RTP), C-V measurement, Hall effect measurement, Deep Level Transient Spectroscopy (DLTS)
Preferred skills
German and English language skills
Technologies
Electron-beam lithography, ALD, RTP, C-V, Hall effect, DLTS
Responsibilities
Fabrication and functionalization of Si nanostructures, process optimization for ALD and RTP, characterization of modulated-doped SiO2 layers, characterization and optimization of Si/SiO2 interface defects, collaboration with project partners